This group specialises in the design of CMOS integrated circuits, as well as the design and manufacture of novel silicon-based semiconductor devices.
In the IC design research, emphasis is placed on the analogue design of RF CMOS integrated circuits, for fabrication in submicron technologies. We are currently able to design circuits in the leading 90 nm and 65 nm processes.
The realisation of silicon-based optoelectronic and nano-explosive devices are also investigated. The use of silicon as a light emitter is researched, and may eventually lead to integrated silicon photonic circuits.
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